INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.26 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0036 ohm, -10 V, -1.7 V
INFINEON
Silicon Carbide Schottky Diode, thinQ 3G 600V Series, Single, 600 V, 3 A, 3.2 nC, TO-252
INFINEON
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.031 ohm, -10 V, -1.5 V
INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0085 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 1.9 A, 800 V, 2.4 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0037 ohm, 10 V, 1.7 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 V
INFINEON
晶体管, MOSFET, N沟道, 10 A, 150 V, 0.0255 ohm, 10 V, 5 V
INFINEON
场效应管, MOSFET
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 6.8 mohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 55 A, 40 V, 0.0059 ohm, 10 V, 1.8 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V
INFINEON
Silicon Carbide Schottky Diode, thinQ 3G 600V Series, Single, 600 V, 4 A, 4.5 nC, TO-252
INFINEON
双路场效应管, MOSFET, 双N沟道, 5 A, 55 V, 0.031 ohm, 10 V, 1.6 V
INFINEON
晶体管, MOSFET, 通用, N沟道, 72 A, 55 V, 0.012 ohm, 10 V, 4 V
INFINEON
双路场效应管, MOSFET, N和P, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
INFINEON
晶体管, MOSFET, P沟道, -15 A, -100 V, 0.14 ohm, -10 V, -1.5 V
INFINEON
晶体管, MOSFET, P沟道, 31 A, -55 V, 60 mohm, -10 V, -4 V