规格：晶体管极性 双N沟道,
WOLFSPEED
单晶体管 双极, 双N沟道, 193 A, 1.2 kV, 0.013 ohm, 20 V, 2.6 V
(EN)WOLFSPEED
单晶体管 双极, 双N沟道, 404 A, 1.2 kV, 0.005 ohm, 20 V, 2.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.021 ohm, 10 V, 1.9 V
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 420 A, 1.85 V, 1.2 kV, Module
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 160 A, 1.8 V, 1.2 kV, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 74 mohm, 10 V, 2.5 V
(EN)INFINEON
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 6.9 A, 30 V, 0.023 ohm, 10 V, 3 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 7.1 A, 30 V, 0.156 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 35 V, 0.03 ohm, 10 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 45 A, 30 V, 0.0039 ohm, 4.5 V, 1.9 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.1 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 0.024 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 14.8 A, 30 V, 0.0043 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 55 A, 30 V, 0.0014 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 0.085 ohm, 10 V, 2.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 5 A, 40 V, 0.048 ohm, 10 V, 2.2 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
