品牌：FUJI ELECTRIC,规格：晶体管极性 N沟道,
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 4 A, SIP
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 300 A, 2.45 V, 1 kW, 600 V, Module
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 200 A, 2.3 V, 735 W, 1.2 kV, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 200 A, 2.45 V, 660 W, 600 V, Module
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 100 A, 1.75 V, 555 W, 1.2 kV, Module
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
晶体管, MOSFET, N沟道, 73 A, 100 V, 25 mohm, 10 V, 5 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 30 A, 2.7 V, 85 W, 600 V, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 100 A, 2.4 V, 310 W, 600 V, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 150 A, 2.2 V, 540 W, 1.2 kV, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, 2件, N沟道, 150 A, 2.6 V, 780 W, 1.2 kV, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 150 A, 2.35 V, 500 W, 600 V, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 150 A, 1.85 V, 1.07 kW, 1.2 kV, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 200 A, 2.05 V, 1.04 kW, 1.2 kV, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 200 A, 1.75 V, 1.5 kW, 1.2 kV, Module
(EN)FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 400 A, 2.05 V, 2.045 kW, 1.2 kV, Module
(EN)
