规格：晶体管封装类型 SOT-26,
DIODES INC.
双极晶体管阵列, 双路, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.03 ohm, -4.5 V, -1.4 V
(EN)
DIODES INC.
双极晶体管阵列, PNP, -150 V, 300 mW, -200 mA, 60 hFE, SOT-26
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 1.6 A, -100 V, 350 mohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -60 V, 0.077 ohm, -10 V, -2.6 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -2 A, -20 V, 0.15 ohm, -4.5 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.6 A, -20 V, 0.029 ohm, -4.5 V, 960 mV
(EN)DIODES INC.
双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 60 V, 0.092 ohm, 10 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 3.3 A, 30 V, 0.072 ohm, 10 V, 1 V
(EN)DIODES INC.
双极晶体管阵列, PNP, -150 V, 300 mW, -200 mA, 60 hFE, SOT-26
(EN)DIODES INC.
双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
(EN)DIODES INC.
双极晶体管阵列, 双路, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.04 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.05 ohm, -10 V, -1.5 V
(EN)
