规格：晶体管封装类型 TO-263AB,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.039 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 250 V, 0.28 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, D2-PAK
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.4 A, 900 V, 1.8 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
(EN)INFINEON
单晶体管, IGBT, 47 A, 1.65 V, 206 W, 600 V, TO-263AB, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 30V, 93A TO-263AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0049 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 0.0082 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 7340 μohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
(EN)
