VISHAY
场效应管, MOSFET, N沟道, 30V, 12A
VISHAY
晶体管, MOSFET, N沟道, 30 A, 40 V, 8.5 mohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -6.9 A, -30 V, 0.018 ohm, -10 V, -1.9 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13.5 A, -20 V, 0.0067 ohm, -4.5 V, -600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 4.6 mohm, -10 V, -1.8 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 30V, SOIC, 整卷
VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 0.35A, SOIC-16, 整卷
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 50 mohm, -10 V, -1.7 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 25 mohm, 4.5 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 79 mohm, 10 V, 2.5 V
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 3.1 A, 30 V, 0.12 ohm, 10 V, -1 V
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 350 mA, SOIC
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 500mA, SOIC-18
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.021 ohm, 10 V, 1.9 V
INFINEON
晶体管, MOSFET, N沟道, 10 A, 40 V, 0.009 ohm, 10 V, 2 V
VISHAY
场效应管, P通道, MOSFET, 整卷
NXP
场效应管, MOSFET阵列, N与P沟道, 300V, 340MA, 8-SOIC
INFINEON
场效应管, MOSFET, 整卷
VISHAY
场效应管, MOSFET, 双路 N 通道, 30V, 0.0093Ω