VISHAY
MOSFET, N CH, 20V, 19.8A, SOIC-8
VISHAY
晶体管, MOSFET, N沟道+肖特基, 7.3 A, 30 V, 0.013 ohm, 10 V, 3 V
VISHAY
MOSFET, N CHANNEL, 12V, 21.5A, SOIC-8
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 0.05 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 170 mohm, 10 V, 5.5 V
INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
NEXPERIA
双极晶体管阵列, PNP, -20 V, 2.3 W, -6.3 A, 250 hFE, SOIC
VISHAY
MOSFET, N CHANNEL, 12V, 34A, SOIC-8
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0082OHM, 9A, SOIC-8
INTERNATIONAL RECTIFIER
场效应管, MOSFET
VISHAY
MOSFET, N CHANNEL, 30V, 0.0032OHM, 30.5A, SOIC-8
INFINEON
场效应管, MOSFET, N沟道, 30V, 11mA
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 2.35 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 7 A, 60 V, 0.033 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 0.013 ohm, 4.5 V, 800 mV
INFINEON
场效应管, MOSFET, P沟道, 10A
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 100 mohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 40 V, 0.009 ohm, 10 V, 1.8 V
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
INFINEON
晶体管, MOSFET, P沟道, 6.7 A, -20 V, 40 mohm, -4.5 V, 700 mV
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0137 ohm, 10 V, 1.8 V