VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
VISHAY
双路场效应管, MOSFET, 双N沟道, 9.2 A, 40 V, 0.0165 ohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 12.5A, SOIC
INFINEON
场效应管阵列, MOSFET, 双P沟道, -30V, -9.2A, SOIC-8
VISHAY
双路场效应管, MOSFET, 双N沟道, 19.8 A, 20 V, 0.0038 ohm, 10 V, 1 V
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 30V, SOIC
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -30V, 1.3W
VISHAY
双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 0.1 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -20 V, 14 mohm, -4.5 V, -830 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.1 A, 40 V, 0.02 ohm, 10 V, 2 V
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -30V, 4.6A, SOIC
INFINEON
双路场效应管, MOSFET, 双P沟道, 3.4 A, -55 V, 105 mohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -14 A, -20 V, 0.006 ohm, -4.5 V, -400 mV
VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
INFINEON
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 30 mohm, 4.5 V, 1.2 V
DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 1.8 A, 60 V, 1.5 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 80V, SOIC