VISHAY
P CHANNEL MOSFET, -30V, 12.6A, SOIC
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
VISHAY
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.036 ohm, -10 V, -1.2 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 7.6A, SOIC
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, N沟道, 20V, 21A, SOIC
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
VISHAY
晶体管, MOSFET, N沟道, 17 A, 30 V, 7.8 mohm, 10 V, 1 V
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5.3A, SOIC
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
芯片
ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
VISHAY
晶体管, MOSFET, N沟道, 18.4 A, 100 V, 0.0073 ohm, 10 V, 1.5 V
INFINEON
场效应管, MOSFET
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -6.9 A, -30 V, 0.045 ohm, -10 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.5 A, 30 V, 10 mohm, 10 V, 1.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.05 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V
VISHAY
场效应管, MOSFET, N沟道, 80V, 30A, SOIC
INFINEON
双路场效应管, MOSFET, 双P沟道, -5.3 A, -20 V, 0.049 ohm, -4.5 V, -700 mV
VISHAY
场效应管, MOSFET, P沟道, -20V, 13.7A, SOIC