NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -160 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 500 mV
DIODES INC.
双极晶体管阵列, 双路, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363
DIODES INC.
双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 305 mA, 50 V, 2 ohm, 5 V, 1 V
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
ON SEMICONDUCTOR
双极晶体管阵列, 通用, NPN, 40 V, 150 mW, 600 mA, 35 hFE, SOT-363
ON SEMICONDUCTOR
双极晶体管阵列, 通用, NPN, 40 V, 150 mW, 200 mA, 300 hFE, SOT-363
ON SEMICONDUCTOR
双极晶体管阵列, 通用, PNP, -40 V, 150 mW, -200 mA, 60 hFE, SOT-363
ON SEMICONDUCTOR
双极晶体管阵列, 通用, NPN, PNP, 40 V, 150 mW, 200 mA, 250 hFE, SOT-363
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
DIODES INC.
单晶体管 双极, NPN, PNP, 40 V, 300 MHz, 200 mW, 600 mA, 100 hFE
DIODES INC.
双极晶体管阵列, 双路, PNP, -60 V, 200 mW, -600 mA, 100 hFE, SOT-363
DIODES INC.
双极晶体管阵列, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363
DIODES INC.
双极晶体管阵列, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363
DIODES INC.
双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
DIODES INC.
双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 40 V, 200 mW, -200 mA, 100 hFE, SOT-363
DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 40 V, 200 mW, -200 mA, 100 hFE, SOT-363
MICRO COMMERCIAL COMPONENTS
双极性晶体管, NPN, 40VDC, SOT-363