规格：晶体管封装类型 SOT-363,
ROHM
双极晶体管阵列, 双路, NPN, 50 V, 150 mW, 100 mA, 68 hFE, SOT-363
(EN)
NEXPERIA
单晶体管 双极, NPN, PNP, 40 V, 100 MHz, 200 mW, 100 mA, 120 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, 双NPN, 45 V, 100 MHz, 380 mW, 100 mA, 270 hFE
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1 A, 25 V, 0.249 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 250 mA, 30 V, 1 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 0.047 ohm, -4.5 V, -400 mV
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
(EN)
NEXPERIA
单晶体管 双极, 双PNP, -65 V, 100 MHz, 200 mW, -100 mA, 200 hFE
(EN)VISHAY
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 180 mA, 60 V, 6 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.027 ohm, 4.5 V, 400 mV
(EN)DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 40 V, 200 mW, 600 mA, 100 hFE, SOT-363
(EN)NEXPERIA
双极晶体管阵列, 通用, PNP, 45 V, 200 mW, 100 mA, 290 hFE, SOT-363
(EN)ROHM
双极晶体管阵列, NPN, 12 V, 150 mW, 500 mA, 270 hFE, SOT-363
(EN)NEXPERIA
双极晶体管阵列, 双NPN, 45 V, 220 mW, 100 mA, 200 hFE, SOT-363
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
(EN)
