品牌：ROHM,规格：晶体管封装类型 TO-247N,
ROHM
单晶体管, IGBT, 场截止沟道, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 48 A, 1.65 V, 174 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 21 A, 650 V, 0.12 ohm, 18 V, 5.6 V
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 55 A, 1.65 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.6 V, 144 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 144 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 72 A, 1.2 kV, 0.03 ohm, 18 V, 5.6 V
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 50 A, 1.6 V, 174 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 85 A, 1.65 V, 277 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
功率场效应管, MOSFET, N沟道, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 93 A, 650 V, 0.022 ohm, 18 V, 5.6 V
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 39 A, 650 V, 0.06 ohm, 18 V, 5.6 V
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 17 A, 1.2 kV, 0.16 ohm, 18 V, 5.6 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.6 V, 144 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 50 A, 1.6 V, 174 W, 650 V, TO-247N, 3 引脚
(EN)
