TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V
NTE ELECTRONICS
双极性晶体管
MULTICOMP
单晶体管 双极, 达林顿, PNP, -100 V, 70 W, -8 A, 1000 hFE
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 70 W, 10 A, 750 hFE
ON SEMICONDUCTOR
单晶体管 双极, PNP, -300 V, 80 W, -8 A, 15 hFE
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 0.78 ohm, 10 V, 3.75 V
NTE ELECTRONICS
双极性晶体管, NPN, 80V TO-220
VISHAY
晶体管, N沟道
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 120 V, 13 mohm, 10 V, 2 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 500 V, 0.73 ohm, 10 V, 3 V
SOLID STATE
晶体管, 双极性晶体管, NPN, 100V, 5A, TO-220-3
STMICROELECTRONICS
单晶体管 双极, NPN, 450 V, 70 W, 2.5 A, 10 hFE
TOSHIBA
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.19 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
MULTICOMP
单晶体管 双极, NPN, 80 V, 80 W, 8 A, 20000 hFE
SOLID STATE
达林顿晶体管, NPN, 10A, TO-220
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 38 A, 300 V, 0.056 ohm, 10 V, 5 V