规格：晶体管封装类型 ISOTOP,
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 200 V, 250 W, 100 A, 27 hFE
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 200 V, 18 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 64 A, 600 V, 96 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 300 V, 22 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 50 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 73 A, 300 V, 45 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 300 V, 225 W, 100 A, 300 hFE
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 200 A, 70 V, 6 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 100 A, 2.5 V, 260 W, 600 V, ISOTOP, 4 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 900 V, 300 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 44 A, 500 V, 120 mohm, 10 V, 4 V
(EN)
