规格：集电极发射电压, Vceo 650V,
INFINEON
单晶体管, IGBT, 42 A, 1.65 V, 125 W, 650 V, TO-220, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 161 W, 650 V, TO-263S, 3 引脚
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 300 A, 1.55 V, 940 W, 650 V, Module
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-220, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 62 A, 1.35 V, 188 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.1 V, 536 W, 650 V, TO-247, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 85 A, 1.65 V, 273 W, 650 V, TO-247, 4 引脚
(EN)
INTERNATIONAL RECTIFIER
晶体管, 双极性, N通道, 650V
INFINEON
双极性晶体管, N沟道, 650V, TO-247A
(EN)INFINEON
单晶体管, IGBT, 90 A, 1.7 V, 300 W, 650 V, TO-247AC, 3 引脚
(EN)INFINEON
双极性晶体管, N沟道, 650V, TO-247A
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 8 A, 1.65 V, 65 W, 650 V, TO-263S, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.6 V, 144 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 50 A, 1.6 V, 174 W, 650 V, TO-247N, 3 引脚
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 引脚
(EN)
