品牌：STMICROELECTRONICS,规格：集电极发射电压, Vceo 50V,
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
STMICROELECTRONICS
Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 1 W, 1.5 A, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
