规格：集电极发射饱和电压, Vce 2.1V,
INFINEON
单晶体管, IGBT, 30 A, 2.1 V, 312 W, 1.6 kV, TO-247, 3 引脚
(EN)
INFINEON
晶体管, IGBT, 600V, 11A
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.1 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 58 A, 2.1 V, 195 W, 1.2 kV, TO-247AD, 3 引脚
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 20 A, 2.1 V, 85 W, 1.2 kV, TO-220AB, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 4 A, 2.1 V, 75 W, 600 V, TO-252, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 引脚
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 130 A, 2.1 V, 600 V, Module
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 58 A, 2.1 V, 250 W, 1.2 kV, TO-247AD, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2.1 V, 278 W, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 43 A, 2.1 V, 150 W, 1.2 kV, TO-247AD, 3 引脚
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, 7件, N沟道, 35 A, 2.1 V, 240 W, 1.2 kV, Module
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 20 A, 2.1 V, 85 W, 1.2 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 78 A, 2.1 V, 325 W, 1.2 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2.1 V, 600 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.1 V, 384 W, 1.2 kV, TO-247, 3 引脚
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 40 A, 2.1 V, 1.05 kW, 1.2 kV, SEMITOP 3
(EN)
