规格：功耗 Pd 1.6W,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6.9 A, -30 V, 22 mohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 150 V, 425 mohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 0.086Ω, 2.7A, SUPERSOT-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.037 ohm, 12 V, -800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -7 A, -30 V, 23 mohm, -10 V, -1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 90 mohm, -4.5 V, -400 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 13 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 35 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.041 ohm, -10 V, -1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0037 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 170 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4 A, -30 V, 0.044 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 100 mohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 60 V, 130 MHz, 1.6 W, 3 A, 280 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET , 30V, 6.3A, N通道*NIC*
(EN)
