规格：功耗 Pd 1.25W,
VISHAY
场效应管, MOSFET, 双N沟道, 30V, SOIC
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V
(EN)DIODES INC.
单晶体管 双极, NPN, 20 V, 215 MHz, 1.25 W, 4.5 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 50 V, 200 MHz, 1.25 W, 4 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 100 V, 175 MHz, 1.25 W, 2.5 A, 450 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 40 V, 270 MHz, 1.25 W, 3 A, 450 hFE
(EN)
