规格：功耗 Pd 1.25W,
INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 98 mohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 80 mohm, 4.5 V, 1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.95 A, -30 V, 200 mohm, -10 V, -3 V
(EN)
NEXPERIA
双极晶体管阵列, AEC-Q101, 双NPN, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205
(EN)NEXPERIA
双极晶体管阵列, AEC-Q101, NPN, PNP, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205
(EN)NEXPERIA
双极晶体管阵列, AEC-Q101, 双PNP, -100 V, 1.25 W, -3 A, 10 hFE, SOT-1205
(EN)NEXPERIA
双极晶体管阵列, AEC-Q101, 双NPN, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205
(EN)NEXPERIA
双极晶体管阵列, AEC-Q101, 双PNP, -100 V, 1.25 W, -3 A, 10 hFE, SOT-1205
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 30 V, 154 mohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.021 ohm, -10 V, -2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 1.6 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 30 V, 0.185 ohm, 4.5 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -8 V, 52 mohm, -4.5 V, -800 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
(EN)
