规格：功耗 Pd 1.25kW,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.024 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 52 A, 900 V, 160 mohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 500 A, 1.45 V, 1.25 kW, 600 V, Module
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 32 A, 1 kV, 0.32 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 80 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, 双NPN, 485 A, 1.55 V, 1.25 kW, 650 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 225 A, 3.2 V, 1.25 kW, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 310 A, 2 V, 1.25 kW, 1.7 kV, Module
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 82 A, 3.2 V, 1.25 kW, 1.2 kV, TO-247AD, 3 引脚
(EN)
POWEREX
晶体管, IGBT模块, 1.2KV, 225A
(EN)
