规格：功耗 Pd 96W,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 114 A, 60 V, 0.0029 ohm, 10 V, 3.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.042 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 56 A, 60 V, 0.0103 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 330 A, 40 V, 0.00095 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 7.9 A, 650 V, 0.52 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.9 A, 800 V, 3.7 ohm, 10 V, 4.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 60 V, 0.0056 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0017 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.031 ohm, 5 V, 1.7 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.004 ohm, 10 V, 800 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.00944 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.0096 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0243 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.15 ohm, 8 V, 2.1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V
(EN)
