品牌：INFINEON,规格：功耗 Pd 63W,
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 90 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0021 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.014 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.013 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 100 mohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.2 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.0032 ohm, 4.5 V, 800 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 68 A, 60 V, 0.0055 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, IGBT, 600V, 11A
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.1 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 55 V, 8 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 112 A, 40 V, 0.0022 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 108 A, 40 V, 0.0025 ohm, 10 V, 3 V
(EN)
INFINEON
MOSFET, DUAL N CHANNEL, 25V, 188A, PQFN-
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 20V, 211A, DIRECTFET
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V
(EN)
