规格：功耗 Pd 90W,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.43 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -60 V, 2.5 MHz, 90 W, -15 A, 5 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
MULTICOMP
单晶体管 双极, 通用, PNP, -60 V, 2.5 MHz, 90 W, 15 A, 100 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
(EN)
INFINEON
单晶体管, IGBT, 13 A, 1.8 V, 90 W, 600 V, TO-220AB, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
晶体管套件
(EN)
NTE ELECTRONICS
晶体管, 双极性, PNP, -45V, -10A, TO
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.27 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.32 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 80 V, 3 MHz, 90 W, -10 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 0.54Ω, -7.3A, TO-263-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -100 A, -75 V, 0.0062 ohm, -10 V
(EN)
