规格：功耗 Pd 68W,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 102 A, 40 V, 0.0027 ohm, 10 V, 3.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -40 V, 0.0058 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.118 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.04 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.12 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.0286 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 30 V, 0.0036 ohm, 10 V, 1.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.4 A, 700 V, 0.86 ohm, 10 V, 3 V
(EN)
