规格：功耗 Pd 68W,
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0036 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 57 A, 80 V, 0.0078 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0051 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -60 A, -12 V, 0.0048 ohm, -4.5 V, -600 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0037 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0042 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 30 V, 0.0036 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 0.045 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.0286 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 60 V, 0.027 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00484 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 107 A, 40 V, 0.0025 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 102 A, 30 V, 0.0029 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.04 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.155 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.044 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 19 A, -55 V, 100 mohm, -10 V, -4 V
(EN)
