STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 37 A, 600 V, 30 mohm, 10 V, 3 V
VISHAY
单晶体管, IGBT, 111 A, 2.23 V, 447 W, 600 V, SOT-227, 4 引脚
(EN)
