TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
DIODES INC.
单管二极管 齐纳, 精准, 33 V, 500 mW, SOD-123, 2 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 5.6 V, 500 mW, SOD-123, 2 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 1.8 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 精准, 3.3 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 精准, 3.6 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 精准, 5.1 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 精准, 7.5 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 精准, 10 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 精准, 12 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 精准, 14 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
DIODES INC.
单管二极管 齐纳, 精准, 14 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
MULTICOMP
齐纳二极管, 500mW, 15V, SOD-123
DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 1.6A, 30V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -12 V, 40 mohm, -4.5 V, -600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 125 mohm, -4.5 V, -1 V