规格：功耗 Pd 417W,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 65 A, 650 V, 0.0354 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 61 A, 200 V, 0.034 ohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.1 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, CoolMOS, N沟道, 52 A, 500 V, 0.06 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 45 A, 550 V, 100 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 417 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.062 ohm, 10 V, 3 V
(EN)
