规格：功耗 Pd 3.5W,
VISHAY
晶体管, MOSFET, P沟道, -29 A, -30 V, 3.9 mohm, -10 V, -2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -11.8 A, -12 V, 0.015 ohm, -4.5 V, -680 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.009 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 420 MHz, 3.5 W, -2 A, 40 hFE
(EN)
VISHAY
场效应管, P通道, MOSFET
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 44A, PQFN-5
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 22A, PQFN-5
(EN)
VISHAY
晶体管, N沟道, 12A, 20V, 3.5W
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.092 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 380 MHz, 3.5 W, 3 A, 200 hFE
(EN)
VISHAY
晶体管, N沟道
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 380 MHz, 3.5 W, -3 A, 200 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 400 MHz, 3.5 W, -4 A, 200 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0046 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 12.9 A, 60 V, 0.034 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.007 ohm, -10 V, -2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.014 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 49A, PQFN-5
(EN)
VISHAY
晶体管, N沟道
(EN)
VISHAY
晶体管, P沟道
(EN)
BROADCOM LIMITED
(EN)
