规格：功耗 Pd 36W,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.026 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 60 V, 0.008 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0085 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.0107OHM, -20A, MLP-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0107 ohm, -10 V, -1.9 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.034 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.037 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 36W, TO-252
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 45 V, 3 MHz, 36 W, 4 A, 85 hFE
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 3 MHz, 36 W, 4 A, 15 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 50 MHz, 36 W, 10 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.32 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, IGBT阵列&模块, N沟道, 11 A, 2 V, 36 W, 600 V, SIP
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 20 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 68 A, 25 V, 0.0038 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)
