规格：功耗 Pd 54W,
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0072 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0033 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0029 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 57 A, 100 V, 0.0064 ohm, 10 V, 3.1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.004 ohm, -10 V, -2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.35 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0112 ohm, 10 V, 2.9 V
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 24 A, 1.4 V, 54 W, 600 V, TO-3PF, 3 引脚
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 11.5 A, 900 V, 0.28 ohm, 15 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.6 A, 650 V, 950 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0178 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 82 A, 30 V, 0.0041 ohm, 10 V, 1.8 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 6.5 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.6 A, 650 V, 950 mohm, 10 V, 5 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0072 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道+肖特基, 163 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V
(EN)
