规格：功耗 Pd 48W,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 5 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 210 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.18 ohm, 5 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0074 ohm, -4.5 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0058 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0022 ohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, N型, 50V, 14A, TO-252AA
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 15 A, 40 V, 0.0133 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0179 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, PowerTrench, 双N沟道, 93 A, 60 V, 0.0025 ohm, 10 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.0105 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.005 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 12A, TO-220
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 400V, 0.83OHM, 4.5A, TO-252-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.019 ohm, 10 V, 4 V
(EN)
