规格：功耗 Pd 450mW,
INFINEON
晶体管 双极-射频, NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管 双极-射频, AEC-Q101, NPN, 12 V, 8 GHz, 450 mW, 65 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 270 MHz, 450 mW, 100 mA, 200 hFE
(EN)DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 500 mA, 60 V, 1.3 ohm, 10 V, 2.5 V
(EN)DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 1.03 A, 20 V, 0.3 ohm, 5 V, 900 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
(EN)INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 450 mW, 65 mA, 70 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -12 V, 100 MHz, 450 mW, -3 A, 180 hFE
(EN)
