规格：功耗 Pd 25W,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0116 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
(EN)
INTERNATIONAL RECTIFIER
晶体管, MOSFET, P沟道, 6.5 A, -100 V, 300 mohm, -10 V, -4 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 3 MHz, 25 W, 3 A, 20 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -100V, 0.82OHM, -3.6A, TO-252-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.26 ohm, 13 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 400V, 3A TO-205AF
(EN)
INFINEON
晶体管, MOSFET, P沟道, -6.5 A, -100 V, 0.345 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 540 mohm, 5 V, 2 V
(EN)
