规格：功耗 Pd 205W,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.12 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 900V, 8A, TO-220
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.14 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 45 A, 1.85 V, 205 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 25 A, 1.85 V, 205 W, 1.2 kV, Module
(EN)
