规格：功耗 Pd 390W,
INFINEON
晶体管, MOSFET, N沟道, 60 A, 250 V, 33 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 500 V, 0.125 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 75 A, 2.35 V, 390 W, 600 V, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 22 A, 650 V, 0.145 ohm, 10 V, 5 V
(EN)INFINEON
单晶体管, IGBT, 75 A, 2.35 V, 390 W, 600 V, TO-247AC, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 108 A, 1.7 V, 390 W, 1.2 kV, TO-247AC, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 75 A, 2.35 V, 390 W, 600 V, TO-247AC, 3 引脚
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)
