规格：功耗 Pd 3.1W,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9 A, 40 V, 0.019 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 40V TO-252
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 13 A, 30 V, 0.0081 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 46 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.0144 ohm, 10 V, 3.7 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 9.3A, PQFN
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0039 ohm, 8 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0035 ohm, 10 V, 1.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.9 mohm, 8 V, 1.1 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 0.03 ohm, 4.5 V, 400 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 60V, 50A, 0.0078OHM, SON-8
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)
