INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 74A, TO-220AB
VISHAY
晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V
INFINEON
晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 65 A, 60 V, 16 mohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0025 ohm, 10 V, 1.8 V
MULTICOMP
单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 150 W, 12 A, 100 hFE
VISHAY
晶体管, MOSFET, N沟道, 200 A, 60 V, 0.0017 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 150 mohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 110A, TO-247AC
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
STMICROELECTRONICS
单晶体管, IGBT, 30 A, 1.35 V, 150 W, 390 V, TO-263, 3 引脚
INFINEON
晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
ON SEMICONDUCTOR
双极性晶体管, NPN, 60V TO-204
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 200 V, 0.12 ohm, 10 V, 3 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V