规格：功耗 Pd 300W,
INFINEON
单晶体管, IGBT, 90 A, 1.7 V, 300 W, 650 V, TO-247AC, 3 引脚
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, 极性FET, N沟道, 10 A, 800 V, 1.1 ohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 800 V, 600 mohm, 10 V, 4.5 V
(EN)IXYS RF
晶体管, 射频FET, 500 V, 21 A, 300 W, 500 kHz, TO-247AD
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 200 V, 45 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
Silicon Carbide IGBT Single Transistor, 75 A, 1.8 V, 300 W, 600 V, TO-247, 3 Pins
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)
SEMELAB
单晶体管 双极, 音频, NPN, 230 V, 60 MHz, 300 W, 18 A, 70 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.012 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, 40 A, -55 V, 16 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0024 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 19 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 280 A, 24 V, 0.0008 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 90 A, 100 V, 8.8 mohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
静电保护装置, AEC-Q101, 43 V, SOT-23, 3 引脚, 300 W
(EN)SEMTECH
静电保护装置, 55 V, SOT-23, 3 引脚, 24 V, 300 W
(EN)SEMTECH
静电保护装置, 24 V, SOT-23, 3 引脚, 12 V, 300 W
(EN)
SEMTECH
双向瞬态抑制二极管
(EN)
SEMTECH
静电保护装置, TVS, 11 V, SOT-23, 3 引脚, 5 V, 300 W
(EN)
