规格：功耗 Pd 300W,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 21 A, 500 V, 250 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 4.6 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 133 A, 100 V, 9 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 70 A, 1.7 V, 300 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 5.6 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 150A, TO-220-3
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2.96 V, 300 W, 1.2 kV, TO-268, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 16 A, 500 V, 400 mohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR
达林顿双极晶体管
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 250 V, 33 mohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, EasyPACK 2B, N沟道, 100 A, 1.45 V, 300 W, 650 V, Module
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 22 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 90 A, 2 V, 300 W, 600 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 42 A, 250 V, 84 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 55 V, 0.002 ohm, 10 V, 2 V
(EN)
