规格：功耗 Pd 300W,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.012 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 30 V, 1.5 mohm, 20 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 40 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 30 V, 0.00037 ohm, 10 V, 2.2 V
(EN)
INFINEON
单晶体管, IGBT, 40 A, 4.23 V, 300 W, 1.2 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 120 V, 0.0029 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, -80 A, -55 V, 18 mohm, -10 V, -3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 50A, TO-247AC
INFINEON
晶体管, MOSFET, N沟道, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 49 V, 0.0058 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 429 A, 24 V, 800 μohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 120 V, 300 W, 50 A, 18 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0103 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 6.5 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0036 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0099 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 460 A, 40 V, 0.0006 ohm, 10 V, 2.8 V
(EN)
