品牌：IXYS SEMICONDUCTOR,规格：功耗 Pd 200W,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 引脚
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 隔离, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.5 ohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 740 mohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 隔离, 26 A, 3.5 V, 200 W, 1.7 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 隔离, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 120 V, 4.5 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 隔离, 68 A, 2.2 V, 200 W, 600 V, TO-247AD, 3 引脚
(EN)
