规格：功耗 Pd 306W,
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.3 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.4 mohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0032 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 2 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 75 V, 3.4 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00116 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 75 V, 3.6 mohm, 10 V, 2.3 V
(EN)
INFINEON
单晶体管, IGBT, 80 A, 1.65 V, 306 W, 600 V, TO-247AC, 3 引脚
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00158 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0025 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.003 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.00328 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0037 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.00472 ohm, 10 V, 3 V
(EN)
