规格：功耗 Pd 270W,
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.7 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.00436 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 通用, 75 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 24 A, 500 V, 0.16 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 0.0082 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 40 A, 1.2 kV, 0.08 ohm, 20 V, 2.6 V
(EN)FUJI ELECTRIC
晶体管, MOSFET, N沟道, 73 A, 100 V, 25 mohm, 10 V, 5 V
(EN)FUJI ELECTRIC
晶体管, MOSFET, N沟道, 32 A, 300 V, 130 mohm, 10 V, 5 V
(EN)
