规格：功耗 Pd 156W,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0051 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 790 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.39 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.1 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 19.8 A, 650 V, 0.157 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 100A, PQFN-8
(EN)
