INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.034 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
FUJI ELECTRIC
单晶体管, IGBT, 31 A, 1.8 V, 155 W, 1.2 kV, TO-247, 3 引脚
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 50A, TO-247AB
INFINEON
单晶体管, IGBT, 40 A, 2.4 V, 305 W, 600 V, TO-247, 3 引脚
INFINEON
单晶体管, IGBT, 15 A, 1.65 V, 105 W, 650 V, TO-220, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0032 ohm, 4.5 V, 2.5 V
ON SEMICONDUCTOR
肖特基整流器, 100 V, 3 A, 单, DO-214AB, 2 引脚, 790 mV
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 159 A, 1.75 V, 1.2 kV, Module
STMICROELECTRONICS
肖特基整流器, 双共阴极, 100 V, 15 A, TO-220AB, 3 引脚, 800 mV
STMICROELECTRONICS
标准恢复二极管, 单, 600 V, 2 A, 1.9 V, 50 ns, 28 A
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 7.2 mohm, 10 V, 4 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 93 A, 650 V, 0.022 ohm, 18 V, 5.6 V
NTE ELECTRONICS
标准二极管, 2.9A, 1KV, 轴向引线
SOLID STATE
单管二极管 齐纳, 10 V, 10 W, DO-4, 5 %, 2 引脚, 175 °C
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 195 A, 1.45 V, 600 V, Module
VISHAY
单管二极管 齐纳, 4.7 V, 500 mW, SOD-80 (迷你MELF), 2 %, 2 引脚, 175 °C
VISHAY
单管二极管 齐纳, 2.4 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
VISHAY
单管二极管 齐纳, 30 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
VISHAY
单管二极管 齐纳, 18 V, 1 W, DO-213AB, 5 %, 2 引脚, 175 °C
VISHAY
单管二极管 齐纳, 6.8 V, 1 W, DO-213AB, 5 %, 2 引脚, 175 °C
VISHAY
整流器, 肖特基, 2A, 100V, DO-214AA, 整卷
IXYS SEMICONDUCTOR
快速/超快功率二极管, 单, 1.2 kV, 30 A, 2.74 V, 40 ns, 200 A
MICRO COMMERCIAL COMPONENTS
二极管, 标准恢复, 1A, 1KV, SOD-123FL, 整卷
ON SEMICONDUCTOR
标准二极管, 1A, 800V, 59-10