INFINEON
单晶体管, IGBT, 60 A, 1.65 V, 349 W, 1.35 kV, TO-247, 3 引脚
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 20 A, 60 V, 0.019 ohm, 10 V, 3 V
STMICROELECTRONICS
快速/超快二极管, 单, 200 V, 3 A, 750 mV, 35 ns, 100 A
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
INFINEON
单晶体管, IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 引脚
INFINEON
单晶体管, IGBT, 12 A, 2.2 V, 39 W, 600 V, TO-220FP, 3 引脚
INFINEON
单晶体管, IGBT, 48 A, 1.6 V, 250 W, 600 V, TO-263, 2 引脚
ON SEMICONDUCTOR
快速/超快二极管, 单, 400 V, 4 A, 1.28 V, 75 ns, 110 A
ON SEMICONDUCTOR
单晶体管, IGBT, 160 A, 1.55 V, 454 W, 1.2 kV, TO-247, 3 引脚
STMICROELECTRONICS
快速/超快二极管, 单, 1.2 kV, 8 A, 1.25 V, 50 ns, 80 A
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 349 A, 60 V, 0.0013 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -18.5 A, -60 V, 0.12 ohm, -5 V, -1.5 V
NTE ELECTRONICS
标准二极管, 2A, 1KV, DO-15
ON SEMICONDUCTOR
单晶体管 双极, NPN, 250 V, 150 W, 15 A, 15 hFE
VISHAY
齐纳二极管, 1.3W, 18V, DO-41
INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 0.04 ohm, 10 V, 4 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, 250 V, 150 W, 15 A, 15 hFE
ON SEMICONDUCTOR
快速/超快二极管, 双共阴极, 200 V, 20 A, 1.15 V, 35 ns, 100 A
VISHAY
单管二极管 齐纳, 39 V, 1.3 W, DO-41, 5 %, 2 引脚, 175 °C
INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0095 ohm, 10 V, 3 V
STMICROELECTRONICS
标准功率二极管, 单, 1.2 kV, 30 A, 1.3 V, 57 ns, 210 A
VISHAY
晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V
ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V