品牌：INFINEON,规格：工作温度最高值 150°C,
INFINEON
晶体管, IGBT阵列&模块, N沟道, 650 A, 2 V, 4.15 kW, 1.7 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 900 A, 1.75 V, 5.1 kW, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 900 A, 1.75 V, 5.1 kW, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 15 A, 1.85 V, 130 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 30 A, 1.55 V, 115 W, 600 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 150 A, 1.75 V, 175 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 150 A, 1.75 V, 680 W, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 200 A, 1.75 V, 1 kW, 1.2 kV, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 20 A, 1.55 V, 135 W, 600 V, Module
(EN)INFINEON
晶体管, IGBT阵列&模块, 低功率, N沟道, 30 A, 1.55 V, 150 W, 600 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 335 W, 1.2 kV, Module
(EN)
INFINEON
单晶体管, IGBT, 3 A, 2.8 V, 62.5 W, 1.2 kV, TO-263, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 299 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 550 V, 399 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 650 V, 0.47 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 650 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.9 A, 900 V, 0.62 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
