品牌：INFINEON,规格：工作温度最高值 150°C,
INFINEON
晶体管, IGBT阵列&模块, N沟道, 400 A, 1.45 V, 940 W, 600 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 675 A, 1.75 V, 2.25 kW, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 75 A, 1.85 V, 395 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 840 A, 1.95 V, 3.35 kW, 1.7 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 280 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 300 A, 1.55 V, 940 W, 650 V, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 600 A, 1.75 V, 4.05 kW, 1.2 kV, Module
(EN)
INFINEON
场效应管, MOSFET, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9 A, 40 V, 0.012 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 6 A, 100 V, 300 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8 A, 100 V, 180 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -20 V, 0.1 ohm, -2.7 V, -700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.105 ohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.02 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -2 V
(EN)
INFINEON
单晶体管, IGBT, 60 A, 600 V, 308 W, 600 V, TO-247AD, 3 引脚
(EN)
INFINEON
二极管 桥式整流, BAx系列, 单相, 30 V, 900 mA, SOT-143, 700 mV, 4 引脚
(EN)
